A novel high purity, highly efficient, broadband MMIC frequency multiplier implemented in metamorphic HEMT technology

A new principle of a high efficiency active frequency multiplier is presented. High efficiency is achieved by operating the transistor in deep Class C by using a source RC-bias-network, forcing the conduction angle to be substantially less than 180deg. The principle can also be extended to balanced frequency multipliers for higher rejection of the fundamental frequency. The ´proof of concept´ is demonstrated in a practical MMIC design. This design achieves, to our knowledge, the highest reported efficiency for a balanced frequency doubler, with high bandwidth