Microthyristor as a microelectronics device

Author

Zekry, A. ; Hafez, I.M. ; Hady, M. EI

Author_Institution

Electron. & Commun. Eng. Dept., Ain Shams Univ., Cairo, Egypt

fYear

2002

fDate

28 Sept. 2002

Firstpage

53

Lastpage

68

Abstract

In this paper, a new microthyristor structure suitable for microelectronics applications has been introduced. A suitable technology for its implementation has been chosen. The microthyristor has been designed and its performance has been simulated. The device showed superior performance concerning switching times and power dissipation in addition to controllability of its S-curve. During the development of this work, we introduced some new concepts such as doping-engineered devices, thyristor turn-off by shunting its cathode junction, and power consumption reduction by realizing high resistances. The basic requirements and some conditions are put together for the successful launch of microthyristors in microelectronics.

Keywords

doping profiles; isolation technology; low-power electronics; semiconductor device models; switching; thyristor circuits; thyristors; S-curve control; cathode junction shunting thyristor turn-off; doping-engineered devices; gate-turn-off thyristors; high resistance power consumption reduction; microthyristor microelectronics devices; thyristor switching time/power dissipation; trench isolation; CMOS logic circuits; Cathodes; Controllability; Energy consumption; Logic devices; Microelectronics; Power dissipation; Power electronics; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Devices, 2002. (EWAED). The First Egyptian Workshop on Advancements of

Print_ISBN

977-5031-73-7

Type

conf

DOI

10.1109/EWAED.2002.1177878

Filename

1177878