Title :
Stochastic resonance in nanodevice parallel systems
Author_Institution :
Grad. Sch. of Inf. Sci. & Technol., Hokkaido Univ., Sapporo, Japan
Abstract :
Stochastic resonance (SR) in nanodevice parallel network systems is described. The SR is a phenomenon in which the response of the system is enhanced by adding noise. Parallel network of GaAs-based nanowire field-effect transistors (FETs) operating in subthreshold region exhibits enhanced signal response by noise addition. Input-output signal correlation shows a peak in optimal noise, confirming the appearance of the SR. Massive parallelism realizes robustness against fluctuation of noise intensity. For ultra-low-power electronic SR, a single-electron quantum dot (QD) parallel network system is investigated by simulation and theoretical analysis. The mechanism and detail behaviors are discussed.
Keywords :
III-V semiconductors; circuit noise; circuit simulation; field effect transistor circuits; field effect transistors; gallium arsenide; linear network synthesis; low-power electronics; nanoelectronics; nanowires; semiconductor quantum dots; stochastic processes; GaAs; Input-output signal correlation; massive parallelism; nanodevice parallel network systems; nanowire field-effect transistors; noise addition; noise intensity fluctuation; optimal noise; single-electron quantum dot parallel network system; stochastic resonance; subthreshold region; ultra-low-power electronic SR; Bit error rate; FETs; Fluctuations; Noise robustness; Quantum dots; Semiconductor device noise; Signal processing; Signal to noise ratio; Stochastic resonance; Strontium;
Conference_Titel :
Intelligent Signal Processing and Communication Systems, 2009. ISPACS 2009. International Symposium on
Conference_Location :
Kanazawa
Print_ISBN :
978-1-4244-5015-2
Electronic_ISBN :
978-1-4244-5016-9
DOI :
10.1109/ISPACS.2009.5383825
