Title :
A Physics-Based Nonlinear Model of Microwave P-I-N Diode for CAD
Author :
Gatard, Emmanuel ; Bouysse, Philippe ; Sommet, Raphaël ; Quéré, Raymond ; Bureau, Jean-Marc ; Ledieu, Pascal ; Stanislawiak, Michel ; Tolant, Clément
Author_Institution :
XLIM CNRS IUT GEII, Brive la Gaillarde
Abstract :
A p-i-n diode model for switching and limiting applications is presented. The model allows to simulate the I-region store charge effect that governs the impedance-frequency characteristic of the diode. The model also includes recombination phenomenon in the heavily doped region and junctions effects. The diode model has been implemented in a commercial circuit simulator and validated with a good agreement by measurement results
Keywords :
CAD; carrier lifetime; microwave diodes; p-i-n diodes; CAD; carrier lifetime; design automation; forward bias; microwave p-i-n diode; nonlinear model; Analytical models; Charge carrier lifetime; Charge carrier processes; Circuit simulation; Impedance; Integrated circuit modeling; Microwave frequencies; P-i-n diodes; Radio frequency; Spontaneous emission; Carrier lifetime; design automation; forward bias; modeling; p-i-n diode;
Conference_Titel :
European Microwave Integrated Circuits Conference, 2006. The 1st
Conference_Location :
Manchester
Print_ISBN :
2-9600551-8-7
DOI :
10.1109/EMICC.2006.282808
