New drain current model for MESFET/HEMT devices based on pulsed measurements

Author

Rafael-Valdivia, Guillermo ; Brady, Ronan ; Brazil, Thomas J.

Author_Institution

Sch. of Electr., Electron. & Mech. Eng., Univ. Coll. Dublin

fYear

2006

fDate

10-13 Sept. 2006

Firstpage

289

Lastpage

291

Abstract

In this work, a new Ids current equation and FET model are proposed based on DC and pulsed I/V measurements. Its implementation is based on the identification of a new function that characterizes the differences between dynamic and static conditions. The performance of the model was evaluated with scattering, DC and pulsed measurements on different kinds of devices. The results show good agreement for low-high power transistors

Keywords

Schottky gate field effect transistors; high electron mobility transistors; semiconductor device models; DC measurement; HEMT devices; Ids current equation; MESFET device; drain current model; low-high power transistors; microwave devices; pulsed measurements; scattering parameter measurement; Current measurement; Equations; HEMTs; Integrated circuit modeling; Intrusion detection; MESFETs; Microwave measurements; Pulse circuits; Pulse measurements; Voltage; Circuit modeling; FET circuits; MESFETs; microwave devices; pulsed measurements; scattering parameter measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuits Conference, 2006. The 1st

Conference_Location

Manchester

Print_ISBN

2-9600551-8-7

Type

conf

DOI

10.1109/EMICC.2006.282809

Filename

4057632