An Electrothermal Model for GaInP/GaAs Power HBTs with Enhanced Convergence Capabilities

Author

Jardel, O. ; Quéré, R. ; Heckmann, S. ; Bousbia, H. ; Barataud, D. ; Chartier, E. ; Floriot, D.

Author_Institution

Univ. de Limoges, Brive

fYear

2006

fDate

10-13 Sept. 2006

Firstpage

296

Lastpage

299

Abstract

A new model for GaInP/GaAs power heterojunction bipolar transistors (HBT) is proposed. This non-linear electrothermal and fully scalable model was designed with closed-form equations in order to reduce simulation times in complex circuits like high power amplifiers (HPA) and to have good convergence capabilities at high compression levels. This paper presents model topology and shows parameters extraction from pulsed I-V, pulsed [S]-parameters measurements. Simulations performed on a two-stage HPA with 20 HBTs devices have demonstrated the good convergence properties as well as a good correlation with measurements

Keywords

S-parameters; gallium arsenide; gallium compounds; heterojunction bipolar transistors; microwave power amplifiers; power bipolar transistors; GaInP-GaAs; closed form equations; convergence time; electrothermal model; high power amplifiers; model topology; parameters extraction; power HBT; power heterojunction bipolar transistors; pulsed I-V measurement; pulsed [S]-parameters measurement; Circuit simulation; Circuit topology; Convergence; Electrothermal effects; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Nonlinear equations; Pulse amplifiers; Pulse measurements; Electrothermal Model; GaInP/GaAs Power HBTs; convergence time;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuits Conference, 2006. The 1st

Conference_Location

Manchester

Print_ISBN

2-9600551-8-7

Type

conf

DOI

10.1109/EMICC.2006.282811

Filename

4057634