Title :
Preparation of epitaxial LiNbO3 films by the sol-gel method
Author :
Terabe, K. ; Iyi, N. ; Uematsu, Hisashi ; Sakaguchi, I. ; Matsui, Y. ; Kitamura, K. ; Kimura, S.
Author_Institution :
Nat. Inst. for Res. in Inorg. Mater., Ibaraki, Japan
Abstract :
The effect of substrates on the crystallinity and interdiffusion behaviors in sol-gel derived LiNbO3 films were investigated using X-ray diffraction, transmission electron microscopy and secondary ion mass spectroscopy. The epitaxial films were obtained on (0001)-sapphire, (0001)-LiTaO3 and (0001)-5%MgO doped LiNbO 3 substrates with similar crystal structures, but with a variety of lattice constants. When sapphire, which has the largest lattice mismatch with the film, was used, the resulting films heat-treated at 500°C showed a low degree of crystallinity. On the other hand, the films on LiTaO3 and 5% MgO doped LiNbO3 , which have smaller lattice mismatches, showed better degrees of crystallinity. Furthermore, these epitaxial films were formed without serious interdiffusion. Our study shows LiNbO3 films, for the practical application such as optical waveguides, can be prepared by the sol-gel method using a substrate with a small lattice mismatch
Keywords :
X-ray diffraction; chemical interdiffusion; crystal structure; ferroelectric materials; ferroelectric thin films; liquid phase epitaxial growth; lithium compounds; optical waveguides; secondary ion mass spectra; sol-gel processing; surface diffusion; transmission electron microscopy; 600 C; Al2O3; LiNbO3; LiNbO3:MgO; LiTaO3; X-ray diffraction; crystallinity; epitaxial LiNbO3 films; epitaxial films; interdiffusion behavior; lattice constants; lattice mismatch; optical waveguides; secondary ion mass spectroscopy; sol-gel method; transmission electron microscopy; Acoustic waveguides; Chemical vapor deposition; Coatings; Crystallization; Ferroelectric films; Inorganic materials; Lattices; Optical films; Optical waveguides; Substrates;
Conference_Titel :
Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on
Conference_Location :
University Park, PA
Print_ISBN :
0-7803-1847-1
DOI :
10.1109/ISAF.1994.522396