Performance Assessment of Nanoscale Multiple Gate MOSFETs (MuGFETs) for RF Applications

This paper provides an extensive study of the RF performances of the nano-scaled multiple gate MOSFETs (MuGFETs) using 2D and 3D simulations. Analytical expressions, which directly correlates the cut-off frequency (f_T) and maximum oscillation frequency (f _MAX) with the device resistances, such as drain (R_D), source (R_S) and gate resistances (R_G ) have been proposed. The detailed investigation of the source/drain extension regions of a planar DGSOI reveals that a spacer, which approaches the length of the gate offers improved RF performances as compared to the conventional devices. It is further shown that at lower drain current the f_T of both single gate (SG) and triple gate devices (FinFETs) are virtually identical, whereas SG performs better at higher drain current