DocumentCode
3157504
Title
RF and Noise Performance of Multiple-Gate SOI MOSFETs
Author
Lazaro, A. ; Iniguez, B.
Author_Institution
Dept. of Electron., Electrics, & Autom. Eng., Univ. Rovira i Virgili, Tarragona
fYear
2006
fDate
10-13 Sept. 2006
Firstpage
312
Lastpage
315
Abstract
We present a new model for single-gate (SG) SOI, cylindrical undoped (lightly doped) gate-all-around (GAA) or surrounding gate (SGT) MOSFETs and double gate fully depleted silicon-on-insulator (DG SOI) for DC, RF and noise modeling. Using this model, the single-gate, GAA and DG analog and noise performances are compared
Keywords
MOSFET; semiconductor device models; semiconductor device noise; silicon-on-insulator; DC modeling; RF modeling; cylindrical undoped MOSFET; double gate fully depleted silicon-on-insulator; gate-all-around MOSFET; multiple-gate SOI MOSFET; noise modeling; semiconductor device models; single-gate SOI; surrounding gate MOSFET; Electron mobility; Electronic mail; FinFETs; Integrated circuit noise; MOSFETs; Microwave integrated circuits; Production; Radio frequency; Radiofrequency integrated circuits; Silicon on insulator technology; MOS transistors; Modeling; Noise; SOI;
fLanguage
English
Publisher
ieee
Conference_Titel
European Microwave Integrated Circuits Conference, 2006. The 1st
Conference_Location
Manchester
Print_ISBN
2-9600551-8-7
Type
conf
DOI
10.1109/EMICC.2006.282815
Filename
4057638
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