High power symmetrical GCT for current source inverter

Author

Satoh, K. ; Yamamoto, M. ; Morishita, K. ; Yamaguchi, Y. ; Iwamoto, H.

Author_Institution

Power Device Div., Mitsubishi Electr. Corp., Fukuoka, Japan

Volume

2

fYear

1999

fDate

1999

Firstpage

877

Abstract

GCT (gate commutated turn-off thyristor) is a new high power device with snubberless turn-off operation which was developed in the mid-1990s, and is growing up to be the main device instead of GTO (gate turn-off thyristor) for high power application. For PWM current source inverters used in AC drive, symmetrical GCT with reverse blocking characteristics are expected. However, the symmetrical structure generally gives smaller turn-off capability compared with asymmetrical GCT, which has already been developed. This paper presents new GCT technologies, characteristics of 6 kV/4 kA symmetrical GCT and comparison of loss between current source inverter and voltage source inverter by using GCT

Keywords

commutation; invertors; thyristor convertors; 4 kA; 6 kV; AC drive; PWM current source inverters; current source inverter loss; gate commutated turn-off thyristor; high power device; high power symmetrical GCT; reverse blocking; snubberless turn-off operation; symmetrical structure; voltage source inverter loss; Capacitance; Cathodes; Circuits; Inductance; MOSFETs; Packaging; Pulse width modulation; Pulse width modulation inverters; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Drive Systems, 1999. PEDS '99. Proceedings of the IEEE 1999 International Conference on

Print_ISBN

0-7803-5769-8

Type

conf

DOI

10.1109/PEDS.1999.792822

Filename

792822