• DocumentCode
    3157669
  • Title

    High-efficiency cell structures and processes applied to photovoltaic-grade Czochralski silicon

  • Author

    Gee, James M. ; King, Richard R. ; Mitchell, Kim W.

  • Author_Institution
    Dept. of Photovoltaic Syst. Components, Sandia Nat. Labs., Albuquerque, NM, USA
  • fYear
    1996
  • fDate
    13-17 May 1996
  • Firstpage
    409
  • Lastpage
    412
  • Abstract
    We performed a detailed study to examine the limiting performance available using “photovoltaic-grade” Cz silicon. Photovoltaic-grade silicon refers to silicon produced by the photovoltaic industry, which may differ from the silicon used in the semiconductor device industry in impurity and defect concentrations. The study included optimization of fabrication processes, development of advanced device structures, and detailed model calculations to project future performance improvements. Process and device optimization resulted in demonstration of 75-μs bulk lifetimes and 17.6% efficient large-area cells using photovoltaic-grade Cz silicon. Detailed calculations based on the material and device evaluation of the present work project efficiencies of 20% for photovoltaic-grade Cz silicon with properly optimized processing and device structures
  • Keywords
    carrier lifetime; elemental semiconductors; silicon; solar cells; 17.6 percent; 75 mus; Si; bulk lifetimes; defect concentrations; fabrication processes optimisation; future performance improvements; high-efficiency cell structures; impurity concentrations; large-area solar cells; photovoltaic-grade Czochralski silicon; Fabrication; Laboratories; Photovoltaic cells; Photovoltaic systems; Radiative recombination; Silicon; Solar power generation; Spontaneous emission; Substrates; Thermal degradation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
  • Conference_Location
    Washington, DC
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-3166-4
  • Type

    conf

  • DOI
    10.1109/PVSC.1996.564030
  • Filename
    564030