Title :
Mixed-Mode Modeling and Parameter Extraction of Advanced InGaAs HBTs in RFIC Systems
Author :
Tseng, Hsien-cheng
Author_Institution :
Dept. of Electron. Eng., Kun Shan Univ., Tainan
Abstract :
Mixed-mode modeling is originally demonstrated for parameter extraction of advanced InGaAs HBTs in RFIC systems. This efficient approach combines the genetic algorithm (GA) with succinct analytical formulae to determine physically meaningful circuit elements used in the SPICE-like simulator. Evaluation of simulated and analytically-derived values validates the accuracy of this methodology
Keywords :
III-V semiconductors; bipolar transistor circuits; gallium arsenide; genetic algorithms; heterojunction bipolar transistors; indium compounds; integrated circuit modelling; mixed analogue-digital integrated circuits; parameter estimation; radiofrequency integrated circuits; HBT; InGaAs; RFIC systems; SPICE simulator; genetic algorithm; mixed-mode modeling; parameter extraction; Biological cells; Circuit simulation; Cost function; Genetic algorithms; Genetic mutations; Indium gallium arsenide; Parameter extraction; Parasitic capacitance; Radiofrequency integrated circuits; Scattering parameters; Genetic algorithm; InGaAs HBTs; RFIC; mixed-mode modeling; parameter extraction;
Conference_Titel :
European Microwave Integrated Circuits Conference, 2006. The 1st
Conference_Location :
Manchester
Print_ISBN :
2-9600551-8-7
DOI :
10.1109/EMICC.2006.282655
