Studies of InGaAs layers growth by metalorganic chemical vapor deposition for InP-HEMTs; Effects of trimethylindium and triethylindium

Author

Sakai, Ryuta ; Uchida, Masahiro ; Araki, Gako

Author_Institution

NTT Adv. Technol. Corp., Atsugi

fYear

2006

fDate

10-13 Sept. 2006

Firstpage

360

Lastpage

362

Abstract

We studied an InGaAs epitaxial layers growth by metalorganic chemical vapor deposition (MOCVD) for InP-based high electron mobility transistors (HEMTs). The InGaAs channel layer of HEMTs was grown by a new material combination of triethylindium (TEI), triethylgallium (TEG) and arsine (AsH₃). An electron mobility of the HEMTs structure sample was 20% higher than the one grown by trimethylindium (TMI), TEG and AsH₃. And the DC characteristics of the HEMTs, the drain current and transconductance, were increased compared with the one. It is confirmed that this growth method is quite effective for the improvement of a characteristics of InP-based HEMTs

Keywords

III-V semiconductors; MOCVD; electron mobility; gallium arsenide; high electron mobility transistors; indium compounds; organic compounds; semiconductor epitaxial layers; semiconductor growth; AsH₃; DC characteristics; InGaAs; InGaAs channel layer; InGaAs epitaxial layers; InP; InP-HEMT; InP-based high electron mobility transistors; MOCVD; arsine; drain current; metalorganic chemical vapor deposition; transconductance; triethylindium; trimethylindium; Chemical vapor deposition; Electron mobility; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MOCVD; MODFETs; Pollution measurement; Substrates; CVD; Epitaxial layers; Hall effect; current; indium;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuits Conference, 2006. The 1st

Conference_Location

Manchester

Print_ISBN

2-9600551-8-7

Type

conf

DOI

10.1109/EMICC.2006.282656

Filename

4057650