Effects of sol-gel PZT film thickness and electrode structure on the electrical behavior of Pt/PZT/Pt capacitors

Author

Kneer, E.A. ; Birnie, D.P., III ; Teowee, G. ; Podlesny, J.C.

Author_Institution

Dept. of Mater. Sci. & Eng., Arizona Univ., Tucson, AZ, USA

fYear

1991

fDate

33457

Firstpage

446

Lastpage

449

Abstract

Sol-gel derived lead zirconate titanate (PZT) films were deposited and crystallized on platinized Si/SiO₂ and Al₂O ₃ wafer substrates in the film thickness range of 500-7000 Å. Electrical testing was conducted to evaluate the effect of PZT film thickness on capacitor performance. Optical microscopy and AFM data were used to identify factors which might cause shorting in crystallized PZT films. Thin films of Ti or TiO_x were used for Pt bottom and top electrode adhesion in the substrate/Pt/PZT/Pt structured device. The effect of these adhesion layers has been investigated for several electrode composites. The fatigue behavior of these devices has been analyzed and compared

Keywords

adhesion; atomic force microscopy; ferroelectric capacitors; ferroelectric devices; ferroelectric materials; ferroelectric thin films; lead compounds; optical microscopy; piezoceramics; sol-gel processing; thin film capacitors; 500 to 7000 A; Al₂O₃; PZT; PbZrO3TiO3; Pt/PZT/Pt capacitors; Si-SiO₂; electrical behavior; electrical testing; electrode structure; fatigue behavior; film thickness; optical microscopy; platinized Al₂O₃ wafer substrates; platinized Si/SiO₂ wafer substrates; sol-gel PZT film; top electrode adhesion; Adhesives; Conductive films; Crystallization; Electrodes; Optical films; Optical microscopy; Semiconductor films; Substrates; Testing; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on

Conference_Location

University Park, PA

Print_ISBN

0-7803-1847-1

Type

conf

DOI

10.1109/ISAF.1994.522398

Filename

522398