Charge Effects and Transient Simulation of p-HEMT Meander Gate Switches

Author

Holm, M.A. ; Cameron, N.I. ; Brookbanks, D.M.

Author_Institution

Filtronic Compound Semicond. Ltd., Durham

fYear

2006

fDate

10-13 Sept. 2006

Firstpage

367

Lastpage

370

Abstract

This paper presents a simulation of the transient behavior of a filtronic SP6T switch. By employing a non-linear switch model a representation of the switching dynamics is presented. The simulations predict that the changing control voltages has quickly attenuate the fundamental power, however harmonic performance is dependant on the total bias applied to the switch and hence relaxes to its steady state condition 0.15mus after the control voltages have settled. Within this paper we demonstrate the importance of understanding the behavior of the switch during transitions between equilibrium conditions with respect to the radiated spectral content

Keywords

field effect transistor switches; high electron mobility transistors; semiconductor device models; 0.15 mus; charge effects; filtronic SP6T switch; high electron mobility transistors; nonlinear switch model; p-HEMT meander gate switches; switching dynamics; Capacitance; Circuit simulation; Communication switching; Power semiconductor switches; Power system harmonics; Predictive models; Schottky diodes; Steady-state; Switching circuits; Voltage control; Design Automation; MMICs; Microwave switches; Mobile Communication; Modeling; Transient;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuits Conference, 2006. The 1st

Conference_Location

Manchester

Print_ISBN

2-9600551-8-7

Type

conf

DOI

10.1109/EMICC.2006.282658

Filename

4057652