DocumentCode :
3157784
Title :
Charge Effects and Transient Simulation of p-HEMT Meander Gate Switches
Author :
Holm, M.A. ; Cameron, N.I. ; Brookbanks, D.M.
Author_Institution :
Filtronic Compound Semicond. Ltd., Durham
fYear :
2006
fDate :
10-13 Sept. 2006
Firstpage :
367
Lastpage :
370
Abstract :
This paper presents a simulation of the transient behavior of a filtronic SP6T switch. By employing a non-linear switch model a representation of the switching dynamics is presented. The simulations predict that the changing control voltages has quickly attenuate the fundamental power, however harmonic performance is dependant on the total bias applied to the switch and hence relaxes to its steady state condition 0.15mus after the control voltages have settled. Within this paper we demonstrate the importance of understanding the behavior of the switch during transitions between equilibrium conditions with respect to the radiated spectral content
Keywords :
field effect transistor switches; high electron mobility transistors; semiconductor device models; 0.15 mus; charge effects; filtronic SP6T switch; high electron mobility transistors; nonlinear switch model; p-HEMT meander gate switches; switching dynamics; Capacitance; Circuit simulation; Communication switching; Power semiconductor switches; Power system harmonics; Predictive models; Schottky diodes; Steady-state; Switching circuits; Voltage control; Design Automation; MMICs; Microwave switches; Mobile Communication; Modeling; Transient;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
European Microwave Integrated Circuits Conference, 2006. The 1st
Conference_Location :
Manchester
Print_ISBN :
2-9600551-8-7
Type :
conf
DOI :
10.1109/EMICC.2006.282658
Filename :
4057652
Link To Document :
بازگشت