High Performance 94 GHz Resistive Mixer Using GaAs Metamorphic HEMT Technology

Author

An, Dan ; Lee, Bok-Hyung ; Lim, Byeong-Ok ; Lee, Mun-Kyo ; Kim, Sung-Chan ; Park, Hyun-Chang ; Rhee, Jin-Koo

Author_Institution

Millimeter-Wave Innovation Technol. Res. Center, Dongguk Univ., Seoul

fYear

2006

fDate

10-13 Sept. 2006

Firstpage

375

Lastpage

378

Abstract

We present the high performance 94 GHz resistive mixer including IF amplifier using 0.1 mum metamorphic HEMT. For 94 GHz resistive mixer, the metamorphic HEMT of excellent characteristics was developed. The circuit performance of resistive mixer with IF amplifier shows conversion gain of 1.3 dB at LO power of 7 dBm. In this work, we fabricated the resistive mixer which has high performance using metamorphic HEMT. The fabricated resistive mixer shows the superior conversion gain than that of previous reported results

Keywords

HEMT circuits; III-V semiconductors; gallium arsenide; millimetre wave amplifiers; millimetre wave mixers; 0.1 micron; 1.3 dB; 94 GHz; GaAs; GaAs metamorphic HEMT technology; IF amplifier; conversion gain; millimetre wave mixers; resistive mixer; Capacitance; Electron mobility; Gallium arsenide; HEMTs; Image converters; Impedance; Indium gallium arsenide; Mixers; Switches; mHEMTs; MMIC; Metamorphic HEMT; conversion gain; resistive mixer;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuits Conference, 2006. The 1st

Conference_Location

Manchester

Print_ISBN

2-9600551-8-7

Type

conf

DOI

10.1109/EMICC.2006.282660

Filename

4057654