Title :
High Performance 94 GHz Resistive Mixer Using GaAs Metamorphic HEMT Technology
Author :
An, Dan ; Lee, Bok-Hyung ; Lim, Byeong-Ok ; Lee, Mun-Kyo ; Kim, Sung-Chan ; Park, Hyun-Chang ; Rhee, Jin-Koo
Author_Institution :
Millimeter-Wave Innovation Technol. Res. Center, Dongguk Univ., Seoul
Abstract :
We present the high performance 94 GHz resistive mixer including IF amplifier using 0.1 mum metamorphic HEMT. For 94 GHz resistive mixer, the metamorphic HEMT of excellent characteristics was developed. The circuit performance of resistive mixer with IF amplifier shows conversion gain of 1.3 dB at LO power of 7 dBm. In this work, we fabricated the resistive mixer which has high performance using metamorphic HEMT. The fabricated resistive mixer shows the superior conversion gain than that of previous reported results
Keywords :
HEMT circuits; III-V semiconductors; gallium arsenide; millimetre wave amplifiers; millimetre wave mixers; 0.1 micron; 1.3 dB; 94 GHz; GaAs; GaAs metamorphic HEMT technology; IF amplifier; conversion gain; millimetre wave mixers; resistive mixer; Capacitance; Electron mobility; Gallium arsenide; HEMTs; Image converters; Impedance; Indium gallium arsenide; Mixers; Switches; mHEMTs; MMIC; Metamorphic HEMT; conversion gain; resistive mixer;
Conference_Titel :
European Microwave Integrated Circuits Conference, 2006. The 1st
Conference_Location :
Manchester
Print_ISBN :
2-9600551-8-7
DOI :
10.1109/EMICC.2006.282660
