Title :
Compact Electro-thermal Modelling and Simulation of InP HBT Based on the Local Reference Concept
Author :
Ding, J. ; Linton, D. ; Smith, D. ; Steer, M.
Author_Institution :
Inst. of ECIT, Queen´´s Univ. Belfast
Abstract :
This paper presents a new large signal compact electro-thermal model of the OMMICtrade InP heterojunction bipolar transistor (HBT) based on the UCSD (University of California, San Diego) HBT model and the local reference concept for a multi-physics circuit simulator fREEDAtrade. Simulations using this HBT model coupled with other thermal elements show dynamically how electrical behaviour is influenced by temperature variation of the active device from iterative calculations, while other circuit simulators can only show the electrical performance at fixed temperature. Implementation of the HBT thermal model including both the intrinsic and extrinsic properties as a 6-port element in fREEDAtrade is described, and illustrative simulation results in both fREEDAtrade and ADStrade are presented
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; iterative methods; semiconductor device models; HBT thermal model; InP; InP HBT; InP heterojunction bipolar transistor; electro-thermal model; local reference concept; multiphysics circuit simulator fREEDA; thermal elements; Circuit simulation; Computer simulation; Differential equations; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit modeling; Microwave circuits; Power dissipation; Predictive models; Temperature; Electro-thermal Modelling; Electro-thermal Simulation; InP HBT; Local Reference;
Conference_Titel :
European Microwave Integrated Circuits Conference, 2006. The 1st
Conference_Location :
Manchester
Print_ISBN :
2-9600551-8-7
DOI :
10.1109/EMICC.2006.282662
