Title :
A Non-Quasi-Static, Relaxation-Time Small-Signal HEMT Model Compatible with Large-Signal Modeling
Author :
Stiebler, Wolfram C.
Author_Institution :
Raytheon RF Components, Andover, MA
Abstract :
A non-quasi-static, relaxation-time small-signal HEMT model is proposed that is fully compatible with large-signal modeling. The small-signal model is derived by linearization from a large-signal, charge-conserving model that uses a relaxation-time approximation. The model´s topology is fully symmetrical with respect to the gate, and makes use of a comprehensive extrinsic network
Keywords :
approximation theory; high electron mobility transistors; linearisation techniques; relaxation theory; semiconductor device models; charge-conserving model; large-signal modeling; linearization techniques; nonquasistatic HEMT model; relaxation-time approximation; semiconductor device models; small-signal HEMT model; Breakdown voltage; Circuit topology; HEMTs; Integrated circuit modeling; Measurement standards; Microwave integrated circuits; Network topology; Radio frequency; Radiofrequency integrated circuits; Voltage control; non-quasi-static; small-signal model;
Conference_Titel :
European Microwave Integrated Circuits Conference, 2006. The 1st
Conference_Location :
Manchester
Print_ISBN :
2-9600551-8-7
DOI :
10.1109/EMICC.2006.282663
