Title :
Process/structure/property relations of barium strontium titanate thin films deposited by multi-ion-beam sputtering technique
Author :
Peng, C.J. ; Krupanidhi, S.B.
Abstract :
(Ba1-xSrx)TiO3 (BST) thin films with various x were deposited at various substrate temperatures by multi-ion-beam sputtering (MIBERS) technique. A strong correlation was found among processes, structures and properties of the films. For thin films grown at substrate temperature of room temperature and subsequently annealed at 700°C, the microstructure is polycrystalline through the film thickness with a presence of void layer which results in low dielectric constant (K) and continuous decrease of current in current-time (I-t) behavior. For films deposited at high substrate temperature and annealed at 700°C, the columnar structures remained without void layer, and the dielectric constant became much higher. The I-t behavior resembles that of ceramics and single crystals. Nb-dopant in BST thin films lowered the dielectric constant, dissipation factor and leakage current, and improved the time-dependent dielectric breakdown (TDDB). Current-voltage (I-V) characteristics can be related to the process and microstructure as well
Keywords :
annealing; barium compounds; crystal microstructure; crystal structure; electric breakdown; ferroelectric materials; ferroelectric thin films; leakage currents; permittivity; sputtered coatings; strontium compounds; voids (solid); (Ba1-xSrx)TiO3; (BaSr)TiO3; 20 C; 700 C; annealed; barium strontium titanate thin films; current-time behavior; dielectric constant; dissipation factor; leakage current; low dielectric constant; microstructure; multi-ion-beam sputtering technique; polycrystalline; properties; room temperature; structures; time-dependent dielectric breakdown; void layer; Annealing; Barium; Binary search trees; Dielectric constant; Dielectric substrates; Dielectric thin films; Sputtering; Strontium; Temperature; Titanium compounds;
Conference_Titel :
Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on
Conference_Location :
University Park, PA
Print_ISBN :
0-7803-1847-1
DOI :
10.1109/ISAF.1994.522402