Title :
Processing and characterization of ferroelectric thin films in the Pb5Ge3O11-PbZr0.5Ti0.5 O3 system
Author :
Landin, S.M. ; Haun, M.J.
Author_Institution :
Center for Adv. Ceramics, Colorado Sch. of Mines, Golden, CO, USA
Abstract :
This work investigates the crystallization of pure Pb5Ge3O11 (PG) and composition in the Pb5Ge3O11-PbZr0.5Ti0.5 O3 (PG-PZT) system. PG is of interest due to its low processing temperatures and possible application as pyroelectric sensors and nonvolatile ferroelectric memories. Compositions in the PG-PZT system crystallize to form multiple ferroelectric phases at relatively low temperatures, potentially offering a unique combination of ferroelectric properties and processing conditions. Ferroelectric thin films in the PG-PZT system were fabricated on (111) Pt-coated silicon substrates using sol gel processing techniques. Rapid thermal processing was utilized to investigate the time/temperature dependencies of crystallization, phase transformations and orientation of both Pb5 Ge3O11 and PbZr0.5Ti0.5O3. Pb5Ge3 O11 films with a thickness of 2000 Å crystallized with a c-axis orientation of greater than 90% when heat treated at 700°C for 30 seconds
Keywords :
ferroelectric thin films; lead compounds; rapid thermal processing; sol-gel processing; 2000 angstrom; 30 s; 700 degC; Pb5Ge3O11-PbZrO3TiO3; Pb5Ge3O11-PZT; Pt-coated Si substrates; Si; c-axis orientation; crystallization; ferroelectric thin films; multiple ferroelectric phases; nonvolatile ferroelectric memories; phase transformations; pyroelectric sensors; rapid thermal processing; sol-gel processing; Crystallization; Ferroelectric materials; Nonvolatile memory; Pyroelectricity; Rapid thermal processing; Semiconductor thin films; Silicon; Temperature dependence; Temperature sensors; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on
Conference_Location :
University Park, PA
Print_ISBN :
0-7803-1847-1
DOI :
10.1109/ISAF.1994.522404
