DocumentCode
3157986
Title
Frequency-Domain Physics-Based Analysis of semiconductor devices by a Spectral-Balance approach
Author
Leuzzi, Giorgio ; Stornelli, Vincenzo
Author_Institution
Dept. of Electr. Eng., L´´Aquila Univ.
fYear
2006
fDate
10-13 Sept. 2006
Firstpage
410
Lastpage
413
Abstract
In this work, the frequency-domain spectral balance technique is used for the physics-based analysis of non-linear devices and circuits. This technique assumes a very simple form when applied to the moments of Boltzmann´s transport equation, and is especially suitable for very high frequency and for multitone analysis. This approach also allows easy inclusion of frequency-dependent parameters of the semiconductor, especially important at very high frequencies (e.g. dielectric constant), and easy and straightforward coupling to the passive external environment. An example of application to a quasi-2D model with a hydrodynamic formulation of the transport equations is given, and its results are compared to a standard time-domain approach and to DC measured data
Keywords
Boltzmann equation; frequency-domain analysis; semiconductor device models; Boltzmann transport equation; electron device modeling; frequency-domain physics-based analysis; hydrodynamic formulation; multitone analysis; nonlinear circuits; nonlinear devices; quasi2D model; semiconductor devices; spectral-balance approach; Circuits; Computational modeling; Electromagnetic coupling; Electromagnetic modeling; Equations; Fourier series; Frequency domain analysis; Microwave devices; Semiconductor devices; Time domain analysis; Electron device modeling; Frequency domain analysis; Physic-based analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
European Microwave Integrated Circuits Conference, 2006. The 1st
Conference_Location
Manchester
Print_ISBN
2-9600551-8-7
Type
conf
DOI
10.1109/EMICC.2006.282669
Filename
4057663
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