Title :
Annealing effects on the polarity of stored charge of BaTiO3 films on Si
Author :
Chang, L.H. ; Anderson, W.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., State Univ. of New York, Buffalo, NY, USA
Abstract :
A high quality BaTiO3/p-Si interface was achieved at substrate temperature of 500°C by using RF magnetron sputtering. In-situ annealing at the same temperature was carried out to study the charge behavior of BaTiO3 films on Si substrate. Depending on the annealing oxygen pressure and annealing condition, both polarities of effective oxide charge in the metal-ferroelectric-semiconductor, Au/BaTiO3/p-Si, structure was observed. It is believed that the density of electronic states, generated at the interface due to the asymmetry of the structure between BaTiO3 and Si substrate, and the positive oxide charges, depending on the degree of the metal-oxygen reaction for different annealing oxygen pressures and annealing durations, determines the behavior of oxide charge
Keywords :
MIS capacitors; annealing; barium compounds; electronic density of states; elemental semiconductors; ferroelectric capacitors; ferroelectric thin films; gold; interface states; silicon; sputter deposition; 500 degC; Au-BaTiO3-Si; BaTiO3 films; BaTiO3/p-Si interface; RF magnetron sputtering; Si; Si substrate; annealing; effective oxide charge; electronic density of states; metal-ferroelectric-semiconductor structure; positive oxide charges; stored charge; Annealing; Capacitance-voltage characteristics; Capacitors; Ferroelectric films; Gold; Radio frequency; Semiconductor films; Sputtering; Substrates; Temperature;
Conference_Titel :
Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on
Conference_Location :
University Park, PA
Print_ISBN :
0-7803-1847-1
DOI :
10.1109/ISAF.1994.522408
