DocumentCode
3158018
Title
High-efficiency silicon solar cells by low-cost rapid thermal processing, screen printing, and plasma-enhanced chemical vapor deposition
Author
Doshi, P. ; Mejia, J. ; Tate, Keith ; Kamra, S. ; Rohatgi, A. ; Narayanan, Shrikanth ; Singh, R.
Author_Institution
Univ. Center of Excellence for Photovoltaics Res. & Educ., Georgia Inst. of Technol., Atlanta, GA, USA
fYear
1996
fDate
13-17 May 1996
Firstpage
421
Lastpage
424
Abstract
This paper presents, for the first time, the successful integration of three rapid, low-cost, high-throughput techniques for crystalline Si cell fabrication, namely: rapid thermal processing (RTP) for simultaneous diffusion of a phosphorus emitter and aluminum back-surface-field; screen-printing (SP) for the front grid contact; and low-temperature PECVD of SiN for antireflection and surface passivation. This combination has resulted in 4 cm2 cells with efficiencies of 16.3% and 15.9% on 2 Ω-cm FZ and Cz, respectively, as well as 15.4% efficient, 25 cm2 FZ cells. Despite the respectable RTP/SP efficiencies, cells formed by conventional furnace processing and photolithography (CFP/PL) give ~2% (abs.) greater efficiencies. Through in-depth modeling and characterization, this difference is quantified on the basis of emitter design, grid shading, and quality of contacts
Keywords
antireflection coatings; electrical contacts; elemental semiconductors; passivation; photolithography; plasma CVD; plasma CVD coatings; rapid thermal annealing; semiconductor growth; semiconductor thin films; silicon; solar cells; thick films; 15.4 to 16.3 percent; Al; Si; Si:P; aluminum back-surface-field; antireflection coating; crystalline Si solar cell fabrication; emitter design; front grid contact; furnace processing; grid shading; in-depth modeling; phosphorus emitter; photolithography; plasma-enhanced chemical vapor deposition; rapid thermal processing; screen-printing; simultaneous diffusion; surface passivation; Chemical technology; Cleaning; Crystallization; Fabrication; Furnaces; Passivation; Photovoltaic cells; Printing; Rapid thermal processing; Silicon compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location
Washington, DC
ISSN
0160-8371
Print_ISBN
0-7803-3166-4
Type
conf
DOI
10.1109/PVSC.1996.564033
Filename
564033
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