DocumentCode
3158096
Title
GaAs Power pHEMT Characterization for Extracting Nonlinear Parameters of Drain Current by Harmonic Measurement
Author
Chen, Kuan-Yu ; Huang, Chien-Chang
Author_Institution
Dept. of Electr. Eng., Yuan Ze Univ., Taoyuan
fYear
2006
fDate
10-13 Sept. 2006
Firstpage
429
Lastpage
432
Abstract
This paper presents a simple method to extract nonlinear parameters of GaAs pseudomorphic high electron mobility transistor (pHEMT) for Volterra-Series analysis. With measuring the harmonic powers and phase polarities at various attenuations, the nonlinear parameters could be solved in least-square sense to reduce the measured uncertainties. The extracted data are validated by the two-tone measurements for a wide-range bias sweep
Keywords
III-V semiconductors; Volterra series; gallium arsenide; power HEMT; GaAs; Volterra series analysis; drain current; harmonic measurement; harmonic powers; nonlinear parameters; phase polarities; power pHEMT; pseudomorphic high electron mobility transistor; two tone measurements; Attenuation measurement; Current measurement; Data mining; Electron mobility; Gallium arsenide; HEMTs; PHEMTs; Phase measurement; Power measurement; Power system harmonics; Nonlinear parameters; Volterra-series; harmonic measurement; pseudomorphic high electron mobility transistor;
fLanguage
English
Publisher
ieee
Conference_Titel
European Microwave Integrated Circuits Conference, 2006. The 1st
Conference_Location
Manchester
Print_ISBN
2-9600551-8-7
Type
conf
DOI
10.1109/EMICC.2006.282674
Filename
4057668
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