• DocumentCode
    3158174
  • Title

    Aluminum backside segregation

  • Author

    Hieslmair, Henry ; McHugo, Scott ; Weber, E.R.

  • Author_Institution
    Dept. of Mater. Sci. & Miner. Eng., California Univ., Berkeley, CA, USA
  • fYear
    1996
  • fDate
    13-17 May 1996
  • Firstpage
    441
  • Lastpage
    444
  • Abstract
    Aluminum backside gettering of iron was quantitatively characterized and distinguished from effects of precipitation or back surface fields. It is shown that for high impurity concentrations, precipitation increases minority carrier diffusion lengths. This effect is small compared to the diffusion length increases from aluminum gettering. Segregation coefficients (S) for iron between silicon and the backside aluminum were found exceeding 106 and there are indications for S up to 107
  • Keywords
    aluminium; carrier lifetime; getters; iron; minority carriers; precipitation; segregation; Al backside gettering; Al:Fe; Fe gettering; back surface fields; high impurity concentrations; minority carrier diffusion lengths; precipitation; Aluminum; Annealing; Gettering; Impurities; Iron; Length measurement; Materials science and technology; Minerals; Silicon; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
  • Conference_Location
    Washington, DC
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-3166-4
  • Type

    conf

  • DOI
    10.1109/PVSC.1996.564038
  • Filename
    564038
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3158174