Title :
Aluminum backside segregation
Author :
Hieslmair, Henry ; McHugo, Scott ; Weber, E.R.
Author_Institution :
Dept. of Mater. Sci. & Miner. Eng., California Univ., Berkeley, CA, USA
Abstract :
Aluminum backside gettering of iron was quantitatively characterized and distinguished from effects of precipitation or back surface fields. It is shown that for high impurity concentrations, precipitation increases minority carrier diffusion lengths. This effect is small compared to the diffusion length increases from aluminum gettering. Segregation coefficients (S) for iron between silicon and the backside aluminum were found exceeding 106 and there are indications for S up to 107
Keywords :
aluminium; carrier lifetime; getters; iron; minority carriers; precipitation; segregation; Al backside gettering; Al:Fe; Fe gettering; back surface fields; high impurity concentrations; minority carrier diffusion lengths; precipitation; Aluminum; Annealing; Gettering; Impurities; Iron; Length measurement; Materials science and technology; Minerals; Silicon; Temperature;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.564038
