DocumentCode :
3158443
Title :
Simplified RF-MEMS Switches Using Implanted Conductors and Thermal Oxide
Author :
Siegel, Christian ; Ziegler, Volker ; Schönlinner, Bernhard ; Prechtel, Ulrich ; Schumacher, Hermann
Author_Institution :
EADS Germany, Corporate Res. Centre, Munich
fYear :
2006
fDate :
10-13 Sept. 2006
Firstpage :
509
Lastpage :
512
Abstract :
This paper presents microwave capacitive RF-MEMS switches based on a novel simplified fabrication process. The devices are fabricated on a silicon substrate using only one metallisation layer. For the capacitive coupling of the switch, an implanted conductive region and thermally grown silicon oxide is used instead of a second metal layer and an additional dielectric layer. In addition, the formerly used bimorph metallisation layer is replaced by a single-metallisation concept, which results in an increased temperature range of operation. The simplified process as well as the switch topology used lead to high performance and highly reliable RF-MEMS switches. RF-measurement results are presented of Ku- and K-band series switches and a Ka-band parallel switch with low insertion losses between -0.2dB and -0.3dB and isolation of e.g. -17dB at 30GHz
Keywords :
ion implantation; metallisation; microswitches; microwave switches; silicon; silicon compounds; 17 dB; 30 GHz; K-band series switches; Ka-band parallel switches; Ku-band series switches; RF-MEMS switches; bimorph metallisation layer; capacitive coupling; implanted conductors; microwave capacitive switches; silicon oxide; single-metallisation concept; thermal oxide; Conductors; Dielectric substrates; Fabrication; Metallization; Microwave devices; Radiofrequency microelectromechanical systems; Silicon; Switches; Temperature distribution; Thermal conductivity; RF-MEMS; alloy; aluminum; bended beams; implantation; microwave; switch; thermal oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
European Microwave Integrated Circuits Conference, 2006. The 1st
Conference_Location :
Manchester
Print_ISBN :
2-9600551-8-7
Type :
conf
DOI :
10.1109/EMICC.2006.282695
Filename :
4057689
Link To Document :
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