Performance degradation of n-channel MOS transistors during DC and pulsed Fowler-Nordheim stress

Author

Fishbein, Bruce J. ; Jackson, Daniel B.

Author_Institution

Digital Equipment Corp., Hudson, MA, USA

fYear

1990

fDate

27-29 March 1990

Firstpage

159

Lastpage

163

Abstract

The performance degradation of n-channel MOS transistors during DC and pulsed Fowler-Nordhein stress is discussed. The measured performance parameters include threshold voltage, peak transconductance, and saturation-region drain current. For moderate degradation levels (up to 10% decrease in saturation current), the degradation was found to be a universal function to the injected electron charge, independent of the stress voltage for DC stress and independent of the stress waveform for pulsed stress conditions.<>

Keywords

failure analysis; insulated gate field effect transistors; semiconductor device testing; tunnelling; DC stress; MOS transistors; Si-SiO/sub 2/; VLSI; dielectric failure; injected electron charge; measured performance parameters; moderate degradation levels; nMOSFET; peak transconductance; performance degradation; pulsed Fowler-Nordheim stress; pulsed stress conditions; saturation-region drain current; stress voltage; stress waveform; threshold voltage; universal function; Current measurement; Degradation; Dielectrics and electrical insulation; Electric breakdown; Failure analysis; MOSFETs; Pulse measurements; Stress measurement; Threshold voltage; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1990. 28th Annual Proceedings., International

Conference_Location

New Orleans, LA, USA

Type

conf

DOI

10.1109/RELPHY.1990.66080

Filename

66080