Title :
An improved RF MOSFET model including scalable gate resistance and external inductances
Author :
Cha, Jiyong ; Cha, Jun-Young ; Jung, Dae-Hyoun ; Lee, Seonghearn
Author_Institution :
Dept. of Electron. Eng., Hankuk Univ. of Foreign Studies, Hankuk
Abstract :
RF non-quasi-static effect and interconnection delay effect are not considered in a conventional BSIM3v3 RF model. For modeling these effects, an improved RF SPICE model for 0.13 mum MOSFET is developed by including the scalable inductances and using the gate resistance scaling equation. This improved model is validated by finding better agreements with measured S-parameters up to 40 GHz at various Wu and Nf than the conventional one.
Keywords :
CMOS integrated circuits; MOSFET; S-parameters; SPICE; inductance; integrated circuit interconnections; integrated circuit modelling; radiofrequency integrated circuits; semiconductor device models; RF CMOS; RF MOSFET model; RF SPICE model; S-parameters; external inductance; frequency 40 GHz; gate resistance scaling equation; interconnection delay effect; nonquasistatic effect; size 0.13 mum; Delay effects; Electrical resistance measurement; Equations; Integrated circuit modeling; MOSFET circuits; Radio frequency; Roentgenium; SPICE; Scattering parameters; Semiconductor device modeling; BSIM3v3; MOSFET; RF CMOS; RF model; SPICE model; modeling; scalable model;
Conference_Titel :
SoC Design Conference, 2008. ISOCC '08. International
Conference_Location :
Busan
Print_ISBN :
978-1-4244-2598-3
Electronic_ISBN :
978-1-4244-2599-0
DOI :
10.1109/SOCDC.2008.4815665
