Title :
Ultra-wideband silicon on-chip antennas with artificial dielectric layer
Author :
Takahagi, Kazuhiro ; Ohno, Masaki ; Ikebe, Masayuji ; Sano, Eiichi
Author_Institution :
Hokkaido Univ., Sapporo, Japan
Abstract :
On-chip antennas are demanded to further lower the cost of wireless CMOS ICs. We placed an artificial dielectric layer (ADL) between an antenna and Si substrate to improve the antenna gain. A 3.1-10.6-GHz ultra-wideband inverted-F antenna with ADL as well as a low-noise amplifier were designed and fabricated using a 0.18-¿m mixed signal/RF CMOS process with one poly and six metal layers. A fairly good agreement between measured and calculated gain characteristics was obtained. Using the ADL achieved a 2-dB gain enhancement. Increasing the surface dielectric constant for the ADL is expected to further enhance gain.
Keywords :
CMOS integrated circuits; dielectric materials; low noise amplifiers; mixed analogue-digital integrated circuits; permittivity; radiofrequency integrated circuits; silicon; ultra wideband antennas; ultra wideband communication; antenna gain; artificial dielectric layer; frequency 3.1 GHz to 10.6 GHz; gain 2 dB; gain enhancement; low-noise amplifier; mixed signal /RF CMOS process; size 0.18 mum; surface dielectric constant; ultra-wideband inverted-F antenna; ultra-wideband silicon on-chip antennas; wireless CMOS IC; Costs; Dielectric substrates; Low-noise amplifiers; RF signals; Radio frequency; Signal design; Signal processing; Silicon; Ultra wideband antennas; Ultra wideband technology;
Conference_Titel :
Intelligent Signal Processing and Communication Systems, 2009. ISPACS 2009. International Symposium on
Conference_Location :
Kanazawa
Print_ISBN :
978-1-4244-5015-2
Electronic_ISBN :
978-1-4244-5016-9
DOI :
10.1109/ISPACS.2009.5383895
