Ultra-wideband silicon on-chip antennas with artificial dielectric layer

Author

Takahagi, Kazuhiro ; Ohno, Masaki ; Ikebe, Masayuji ; Sano, Eiichi

Author_Institution

Hokkaido Univ., Sapporo, Japan

fYear

2009

fDate

7-9 Jan. 2009

Firstpage

81

Lastpage

84

Abstract

On-chip antennas are demanded to further lower the cost of wireless CMOS ICs. We placed an artificial dielectric layer (ADL) between an antenna and Si substrate to improve the antenna gain. A 3.1-10.6-GHz ultra-wideband inverted-F antenna with ADL as well as a low-noise amplifier were designed and fabricated using a 0.18-Â¿m mixed signal/RF CMOS process with one poly and six metal layers. A fairly good agreement between measured and calculated gain characteristics was obtained. Using the ADL achieved a 2-dB gain enhancement. Increasing the surface dielectric constant for the ADL is expected to further enhance gain.

Keywords

CMOS integrated circuits; dielectric materials; low noise amplifiers; mixed analogue-digital integrated circuits; permittivity; radiofrequency integrated circuits; silicon; ultra wideband antennas; ultra wideband communication; antenna gain; artificial dielectric layer; frequency 3.1 GHz to 10.6 GHz; gain 2 dB; gain enhancement; low-noise amplifier; mixed signal /RF CMOS process; size 0.18 mum; surface dielectric constant; ultra-wideband inverted-F antenna; ultra-wideband silicon on-chip antennas; wireless CMOS IC; Costs; Dielectric substrates; Low-noise amplifiers; RF signals; Radio frequency; Signal design; Signal processing; Silicon; Ultra wideband antennas; Ultra wideband technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Intelligent Signal Processing and Communication Systems, 2009. ISPACS 2009. International Symposium on

Conference_Location

Kanazawa

Print_ISBN

978-1-4244-5015-2

Electronic_ISBN

978-1-4244-5016-9

Type

conf

DOI

10.1109/ISPACS.2009.5383895

Filename

5383895