Title :
Neutron induced defects and their effect on silicon detectors capacitance
Author :
Darvas, R. ; Mudrik, M. ; Seidman, A. ; Croitoru, N.
Author_Institution :
Dept. of Electr. Eng. & Phys. Electron., Tel-Aviv Univ., Ramat-Aviv, Israel
Abstract :
Silicon radiation detectors are employed successfully in high energy physics experiments. In this work emphasis is put on detection, identification and characterization of deep energy levels caused by neutron irradiation. DLTS, C-T as well as C-f measurements were performed on silicon detectors (especially produced for the HI/HERA experiment in Hamburg), which were irradiated by 14.1 MeV neutrons with fluences on the range of 1010-1011 n/cm2. In addition a theoretical model, which describes the frequency and temperature dependencies of the capacitance, is presented
Keywords :
capacitance; deep level transient spectroscopy; elemental semiconductors; neutron effects; radiation detection and measurement; semiconductor counters; silicon; 14.1 MeV; C-T measurements; C-f measurements; DLTS measurements; HI/HERA experiment; Si radiation detectors; deep energy levels; frequency dependence; high energy physics experiments; neutron irradiation; semiconductors; temperature dependence; theoretical model; Capacitance; Electron traps; Energy capture; Energy states; Frequency; Neutrons; Photonic band gap; Radiation detectors; Silicon radiation detectors; Temperature;
Conference_Titel :
Electrical and Electronics Engineers in Israel, 1991. Proceedings., 17th Convention of
Conference_Location :
Tel Aviv
Print_ISBN :
0-87942-678-0
DOI :
10.1109/EEIS.1991.217708
