Title :
1/f noise reduction by interfering with the self correlation of the physical noisy process
Author :
Bloom, I. ; Nemirovsky, Y.
Author_Institution :
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
Abstract :
A new experimental setup for the study of 1/f noise of MOS transistor under nonsteady state condition is presented. The noise measurements demonstrate that by interfering with the self correlation time of the physical process that produces the 1/f noise, the noise power is reduced
Keywords :
insulated gate field effect transistors; interference suppression; semiconductor device noise; 1/f noise reduction; MOS transistor; experimental setup; noise measurements; noise power reduction; nonsteady state condition; physical noisy process; self-correlation destruction; Electron traps; Frequency; MOSFET circuits; Noise generators; Noise measurement; Noise reduction; Semiconductor device noise; Semiconductor films; Steady-state; Telegraphy;
Conference_Titel :
Electrical and Electronics Engineers in Israel, 1991. Proceedings., 17th Convention of
Conference_Location :
Tel Aviv
Print_ISBN :
0-87942-678-0
DOI :
10.1109/EEIS.1991.217710
