DocumentCode :
3158835
Title :
Changeable negative resistance optronic circuit
Author :
Ofer, A.
fYear :
1991
fDate :
5-7 Mar 1991
Firstpage :
65
Lastpage :
68
Abstract :
A changeable negative-resistance optronic circuit has been constructed consisting of a combination of P-N-P transistor, a P-N LED and an N-P-N phototransistor, a P-N LED and a light activated power thyristor. The circuit provides changeable negative-resistance voltage-current characteristics for both increase and decrease in the positively applied voltage. The breakover voltage alternates between two discrete values obtained for specific values of control currents
Keywords :
negative resistance; opto-isolators; optoelectronic devices; bipolar transistors; breakover voltage; changeable negative resistance circuit; light activated power thyristor; negative-resistance optronic circuit; negative-resistance voltage-current characteristics; optocouplers; Anodes; Cathodes; Circuits; Current-voltage characteristics; Fluctuations; Light emitting diodes; Linear approximation; Thyristors; Turning; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical and Electronics Engineers in Israel, 1991. Proceedings., 17th Convention of
Conference_Location :
Tel Aviv
Print_ISBN :
0-87942-678-0
Type :
conf
DOI :
10.1109/EEIS.1991.217711
Filename :
217711
Link To Document :
بازگشت