Quasi-steady-state photoconductance, a new method for solar cell material and device characterization

This paper describes a new method for minority-carrier lifetime determination using a contactless photoconductance instrument in a quasi-steady-state mode. Compared to the more common transient photoconductance decay approach, the new technique permits the use of simpler electronics and light sources, yet has the capability to measure lifetimes in the nanosecond to millisecond range. In addition, by analyzing the quasi-steady-state photoconductance as a function of incident light intensity, an implicit I_SC-V_OV curve can be obtained for noncontacted silicon wafers and solar cell precursors