850-nm Edge-Illuminated Si Photodiodes Fabricated With CMOS-MEMS Technology

Author

Yu-Chen Hsieh ; Fang-Ping Chou ; Ching-Wen Wang ; Chih-Ai Huang ; Yue-Ming Hsin

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan

Volume

25

Issue

20

fYear

2013

fDate

Oct.15, 2013

Firstpage

2018

Lastpage

2021

Abstract

This letter examines edge-illuminated silicon photodiodes (PDs) fabricated using standard CMOS technology operated at 850-nm wavelength. A micro-electro-mechanical systems (MEMS) process was employed to expose the illuminated surface and achieve edge illumination. A single-mode lensed fiber is employed to inject light into the depletion region of the PD directly, limiting and reducing the diffusive carriers within the bulk Si substrate. Through employing this procedure, this letter achieved a superior performance in the 3-dB bandwidth compared with that yielded by vertically illuminated PDs. The 5.4 GHz high bandwidth was obtained using an edge-illuminated PD with a 20 μm× 15.6 μm active region.

Keywords

CMOS analogue integrated circuits; elemental semiconductors; integrated optoelectronics; lighting; micro-optomechanical devices; optical fabrication; optical fibres; optical limiters; photodiodes; silicon; CMOS-MEMS technology; Si; depletion region; diffusive carriers; edge-illuminated silicon photodiodes; microelectromechanical systems; optical fabrication; optical limiting; single-mode lensed fiber; surface illumination; wavelength 850 nm; Bandwidth; CMOS integrated circuits; CMOS technology; Photodiodes; Silicon; Standards; Substrates; Avalanche photodiodes; CMOS integrated circuits; edge-illuminated photodiodes; micro-electro-mechanical systems (MEMS); photodetectors; photodiodes;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2013.2280987

Filename

6595029