DocumentCode
3159267
Title
A 1.2V 3 ∼ 8 GHz low noise amplifier in 0.13μm CMOS
Author
Park, Bong-Hyuk ; Jang, Seong-Hyun ; Lee, Seung-Sik ; Choi, Sang-Sung
Author_Institution
Wireless Connectivity Res. Team, ETRI, Daejeon
Volume
02
fYear
2008
fDate
24-25 Nov. 2008
Abstract
An ultra-wideband (UWB) 3 - 8 GHz low noise amplifier (LNA) using common-gate architecture and shunt-series feedback topology is presented in this paper. Two topologies of LNA are designed in a commercial 0.13 mum 1.2 V mixed CMOS technology. The common-gate LNA shows 9.5 to 12.8 dB power gain, 5.31 dB an average noise figure and 10.8 mW power consumption. A shunt-series feedback achieves 11.5 to 13.7 dB gain, 5.83 dB an average noise figure and 9.6 mW power consumption.
Keywords
CMOS integrated circuits; MMIC amplifiers; field effect MMIC; low noise amplifiers; common-gate LNA; frequency 3 GHz to 8 GHz; gain 9.5 dB to 13.7 dB; mixed CMOS technology; noise figure; power 10.8 mW; power 9.6 mW; power gain; shunt-series feedback topology; size 0.13 mum; ultrawideband low noise amplifier; voltage 1.2 V; Band pass filters; CMOS technology; Feedback; Gain; Impedance; Low-noise amplifiers; Narrowband; Noise figure; Topology; Wideband; CMOS; LNA; Noise Figure; Power Gain;
fLanguage
English
Publisher
ieee
Conference_Titel
SoC Design Conference, 2008. ISOCC '08. International
Conference_Location
Busan
Print_ISBN
978-1-4244-2598-3
Electronic_ISBN
978-1-4244-2599-0
Type
conf
DOI
10.1109/SOCDC.2008.4815704
Filename
4815704
Link To Document