DocumentCode :
3159445
Title :
Modelling of trapping mechanism in MEMS switches
Author :
Dekate, Kunal N. ; Gupta, Anju ; Pande, Rajesh S.
Author_Institution :
Dept. of Electron. (VLSI), Shri. Ramdeobaba Kamla Nehru Eng. Coll., Nagpur, India
fYear :
2010
fDate :
17-19 Sept. 2010
Firstpage :
621
Lastpage :
625
Abstract :
Micro-electromechanical System (MEMS) is a batch fabricated (micro-fabricated) system that contains both electrical and mechanical components. The devices are known to be unstable in there performances due to reliability concerns, trapping mechanism in dielectric is one of the major cause for the reliability issue, modelling of these traps can help to improve stiction occurring in dielectric. With the help of first order kinetic equation it can be possible to determine number of traps. A Model is constructed to predict the amount of charge trapped into the silicon nitride (Si3N4) of the capacitive MEMS Switch.
Keywords :
microswitches; silicon compounds; SiN; batch fabricated system; capacitive MEMS switches; electrical components; first order kinetic equation; mechanical components; microelectromechanical system; trapping mechanism modelling; Dielectrics; Electron traps; Equations; Mathematical model; Micromechanical devices; Switches; Centroid; MEMS; MIM; Silicon Nitride (Si3N4); Switch; dielectric; trapping;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer and Communication Technology (ICCCT), 2010 International Conference on
Conference_Location :
Allahabad, Uttar Pradesh
Print_ISBN :
978-1-4244-9033-2
Type :
conf
DOI :
10.1109/ICCCT.2010.5640453
Filename :
5640453
Link To Document :
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