DocumentCode
3159507
Title
Relationships between thermal treatment and properties of PLT thin films
Author
Liu, Yun ; Zhang, Liangying ; Yao, Xi
Author_Institution
EMRL, Xi´´an Jiaotong Univ., China
fYear
1991
fDate
33457
Firstpage
516
Lastpage
519
Abstract
The effect of thermal treatment conditions on the structures and properties of PLT10 thin films are presented in this paper. Better ferroelectric properties could be obtained when the film is heated up to 600°C with 3°C/min and held there for one hour. Better dielectric properties were observed when the film is heated up to 550°C with 3°C/min and held there for one hour
Keywords
crystal microstructure; dielectric losses; ferroelectric materials; ferroelectric thin films; heat treatment; lanthanum compounds; lead compounds; permittivity; piezoelectric materials; piezoelectric thin films; 550 degC; 600 degC; PLT thin films; PbTaTiO3; dielectric properties; ferroelectric properties; properties; structure; thermal treatment; Dielectric substrates; Dielectric thin films; Ferroelectric films; Ferroelectric materials; Grain size; Semiconductor thin films; Silicon; Sputtering; Temperature; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on
Conference_Location
University Park, PA
Print_ISBN
0-7803-1847-1
Type
conf
DOI
10.1109/ISAF.1994.522418
Filename
522418
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