Title : 
Voltage Controlled GaN-on-Si HFET Power Oscillator Using Thin-Film Ferroelectric Varactor Tuning
         
        
            Author : 
Victor, Alan ; Nath, Jayesh ; Ghosh, Dipankar ; Aygun, Seymen ; Nagy, Walter ; Maria, Jon-Paul ; Kingon, Angus I. ; Steer, Michael B.
         
        
            Author_Institution : 
Microwave Commun. Div., Harris Corp., Morrisville, NC
         
        
        
        
        
        
            Abstract : 
A 1.6 GHz power oscillator with a GaN-on-Si heterostructure field effect transistor (HFET) is reported. The voltage-controlled oscillator used a thin-film barium strontium titanate (BST) interdigital varactor as the tuning element. The surface-mount varactor was fabricated using sputtered BST film and copper metallization on alumina. An output power of 1.6 W (32 dBm) is obtained with a DC conversion efficiency of 25.5%. Flat tuning sensitivity of 500 kHz/V, 49 MHz linear frequency tuning, and power flatness of better than 0.5 dB are obtained with 0-100 V tuning voltage. The maximum oscillator phase noise is -81.4 dBc/Hz at 100 kHz offset
         
        
            Keywords : 
III-V semiconductors; UHF oscillators; alumina; barium compounds; copper; elemental semiconductors; ferroelectric capacitors; field effect transistor circuits; gallium compounds; high electron mobility transistors; metallisation; silicon; thin film capacitors; varactors; voltage-controlled oscillators; wide band gap semiconductors; 0 to 100 V; 1.6 GHz; 1.6 W; 49 MHz; Al2O3; BaSrTiO3; Cu; DC conversion efficiency; GaN-Si; GaN-on-Si HFET power oscillator; GaN-on-Si heterostructure field effect transistor; alumina; copper metallization; flat tuning sensitivity; linear frequency tuning; oscillator phase noise; surface-mount varactor; thin-film barium strontium titanate interdigital varactor; thin-film ferroelectric varactor tuning; voltage controlled oscillator; Binary search trees; Ferroelectric materials; HEMTs; MODFETs; Sputtering; Transistors; Tuning; Varactors; Voltage control; Voltage-controlled oscillators; AlGaN/GaN; BST; GaN; GaN-on-Si; HFET; VCO; ferroelectric films; gallium nitride; master oscillator; power oscillators; strontium titanate; varactor; voltage controlled oscillator;
         
        
        
        
            Conference_Titel : 
Microwave Conference, 2006. 36th European
         
        
            Conference_Location : 
Manchester
         
        
            Print_ISBN : 
2-9600551-6-0
         
        
        
            DOI : 
10.1109/EUMC.2006.281206