A concurrent dual-band CMOS low-noise amplifier for ISM-band application

Author

Jhon, Hee Sauk ; Jung, Hakchul ; Koo, Minsuk ; Shin, Hyungcheol

Author_Institution

Dept. of Electr. & Comput. Sci. Eng., Seoul Nat. Univ., Seoul

Volume

03

fYear

2008

fDate

24-25 Nov. 2008

Abstract

A dual-band CMOS low-noise amplifier (LNA) for ISM-band application is reported. For low power and dual band operation, the designed LNA adopts a positive-feedback LC-ladder network. Moreover, for cost effective approach, the LNA has been fabricated using a 0.18-mum mixed-signal CMOS process. The implemented LNA shows gain of 8.3 dB and 11.2 dB, and noise figure (NF) of 6.1 dB and 6.6 dB at 19 GHz and 25 GHz, respectively. The proposed LNA exhibits 8.1 mW power consumption from 0.8 V supply and the active chip area including pad is about 720 times 460 mum².

Keywords

CMOS analogue integrated circuits; ladder networks; low noise amplifiers; low-power electronics; microwave amplifiers; mixed analogue-digital integrated circuits; ISM-band application; dual band operation; frequency 19 GHz; frequency 25 GHz; gain 11.2 dB; gain 8.3 dB; low power operation; low-noise amplifier; mixed-signal CMOS process; noise figure 6.1 dB; noise figure 6.6 dB; positive-feedback LC-ladder network; power 8.1 mW; size 0.18 mum; voltage 0.8 V; Application software; CMOS digital integrated circuits; CMOS technology; Capacitors; Degradation; Dual band; Frequency; Inductors; Low-noise amplifiers; Transmission lines; CMOS; LNA; component; dual-band;

fLanguage

English

Publisher

ieee

Conference_Titel

SoC Design Conference, 2008. ISOCC '08. International

Conference_Location

Busan

Print_ISBN

978-1-4244-2598-3

Electronic_ISBN

978-1-4244-2599-0

Type

conf

DOI

10.1109/SOCDC.2008.4815733

Filename

4815733