DocumentCode :
3159862
Title :
Fatigue and retention behaviors of Pt-PZT-metal capacitors with various top metallizations
Author :
Teowee, G. ; Quackenbush, E.L. ; Baertlein, C.D. ; Boulton, J.M. ; Uhlmann, D.R.
Author_Institution :
Donnelly Corp., Tuscon, AZ, USA
fYear :
1991
fDate :
33457
Firstpage :
523
Lastpage :
526
Abstract :
The PZT-substrate or PZT-electrode interface can affect the FE properties and specifically the fatigue behaviour. Typical Pt-PZT-Pt capacitors exhibited fatigue resistance up to 108-109 cycles, while RuO2, La0.5Sr0.5CoO3 and YBa2Cu 3O7 electrodes have been reported in literature to yield fatigue-free devices up to 1011-1012 cycles. In an early study which compared the fatigue behaviour of bulk PLZT ceramics with various metal electrodes, it was found that In offered the best fatigue performance (up to 109 cycles). A series of sol-gel derived PZT 53/47 films were fired to 700C to achieve single-phase FE perovskite films. Bottom electrode (or the substrate) consisted of sputtered Pt on oxidized Si wafers. Monolithic capacitors were obtained by depositing top electrodes of Ag, Au, Au-Pd, Pd and Pt. All the capacitors exhibited fatigue, manifested by lower values of P r, Ec and εr but higher leakage currents after cycling
Keywords :
fatigue; ferroelectric capacitors; ferroelectric materials; ferroelectric thin films; lead compounds; leakage currents; metallisation; piezoceramics; platinum; 700 C; Ag; Au; Au,; Au-Pd; In; La0.5Sr0.5CoO3; PZT-electrode interface; PZT-substrate interface; Pd; Pt; Pt-PZT; Pt-PZT-metal capacitors; Pt-PbZrO3TiO3; RuO2; YBa2Cu3O7; fatigue; fatigue resistance; leakage currents after cycling; retention behavior; single-phase ferroelectric perovskite films; sol-gel derived PZT 53/47 films; top metallization effects; Capacitors; Dielectric thin films; Electrodes; Fatigue; Iron; Lead compounds; Metallization; Semiconductor films; Substrates; Titanium compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on
Conference_Location :
University Park, PA
Print_ISBN :
0-7803-1847-1
Type :
conf
DOI :
10.1109/ISAF.1994.522420
Filename :
522420
Link To Document :
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