Title :
Impact of the preheating temperature on the ZnO-TFT characteristics prepared by a sol-gel method
Author :
Kawakami, Y. ; Daito, T. ; Ogata, K. ; Maemoto, T. ; Sasa, S.
Author_Institution :
Nanomater. Microdevices Res. Center, Osaka Inst. of Technol., Osaka, Japan
Abstract :
We report the impact of the preheating temperature on the film quality and the TFT characteristics fabricated without the In incorporation. We found that both the surface roughness and the resistance of the film were greatly reduced for the preheating temperatures over 240°C. A very high transconductance of 13.6 mS/mm was obtained for a TFT (W/L = 50/20 μm) fabricated under the optimized preheating temperature of 240°C.
Keywords :
II-VI semiconductors; semiconductor thin films; sol-gel processing; surface roughness; thin film transistors; wide band gap semiconductors; zinc compounds; ZnO; ZnO-TFT characteristics; film quality; film resistance; preheating temperature; sol-gel method; surface roughness; temperature 240 degC; thin-film transistors; Films; II-VI semiconductor materials; Resistance; Temperature; Temperature measurement; Thin film transistors; Zinc oxide; Sol-gel method; Thin-Film Transistors; Zinc oxide;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-8614-9
DOI :
10.1109/IMFEDK.2015.7158538
