Impact of the preheating temperature on the ZnO-TFT characteristics prepared by a sol-gel method

Author

Kawakami, Y. ; Daito, T. ; Ogata, K. ; Maemoto, T. ; Sasa, S.

Author_Institution

Nanomater. Microdevices Res. Center, Osaka Inst. of Technol., Osaka, Japan

fYear

2015

fDate

4-5 June 2015

Firstpage

38

Lastpage

39

Abstract

We report the impact of the preheating temperature on the film quality and the TFT characteristics fabricated without the In incorporation. We found that both the surface roughness and the resistance of the film were greatly reduced for the preheating temperatures over 240°C. A very high transconductance of 13.6 mS/mm was obtained for a TFT (W/L = 50/20 μm) fabricated under the optimized preheating temperature of 240°C.

Keywords

II-VI semiconductors; semiconductor thin films; sol-gel processing; surface roughness; thin film transistors; wide band gap semiconductors; zinc compounds; ZnO; ZnO-TFT characteristics; film quality; film resistance; preheating temperature; sol-gel method; surface roughness; temperature 240 degC; thin-film transistors; Films; II-VI semiconductor materials; Resistance; Temperature; Temperature measurement; Thin film transistors; Zinc oxide; Sol-gel method; Thin-Film Transistors; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for

Conference_Location

Kyoto

Print_ISBN

978-1-4799-8614-9

Type

conf

DOI

10.1109/IMFEDK.2015.7158538

Filename

7158538