A potentiometric glucose sensing by an enzyme-modified Ta2O5/ZnO/Zn0.6Mg0.4O solution-gate field-effect transistor

Author

Iketani, Ken ; Koike, Kazuto ; Hirofuji, Yuichi ; Maemoto, Toshihiko ; Sasa, Shigehiko ; Yano, Mitsuaki

Author_Institution

Nanomater. Microdevices Res. Center, Osaka Inst. of Technol., Omiya, Japan

fYear

2015

fDate

4-5 June 2015

Firstpage

40

Lastpage

41

Abstract

Growth of a sputtered Ta₂O₅/ZnO/Zn_0.6Mg_0.4O film on a glass substrate and its application to an enzyme-modified field-effect transistor (EnFET) for glucose sensing are reported. This potentiometric glucose sensor showed a stable sensitivity to a wide range of glucose in an electrolyte solution with a detection response time constant of 3 s.

Keywords

II-VI semiconductors; biosensors; blood; enzymes; field effect transistors; semiconductor thin films; sputter deposition; sugar; tantalum compounds; thin film sensors; thin film transistors; wide band gap semiconductors; zinc compounds; EnFET; Ta₂O₅-ZnO-Zn_0.6Mg_0.4O; detection response time constant; electrolyte solution; enzyme-modified Ta₂O₅-ZnO-Zn_0.6Mg_0.4O solution-gate field-effect transistor; glass substrate; potentiometric glucose sensing; sputtered film; time 3 s; Films; II-VI semiconductor materials; Logic gates; Substrates; Sugar; Transistors; Zinc oxide; EnFET; Glucose sensor; ZnO;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for

Conference_Location

Kyoto

Print_ISBN

978-1-4799-8614-9

Type

conf

DOI

10.1109/IMFEDK.2015.7158539

Filename

7158539