DocumentCode
3160048
Title
MCP Bottom Die Crack Issue during Destructive Analysis
Author
Jiang, Yuqi ; Song, Xianzhong ; Lam, TimFai ; Wu, Caihong ; Sun, Mingxia ; Wang, Xiangru ; Li, Xiaoqing
Author_Institution
Spansion (China) Ltd., Suzhou
fYear
2007
fDate
10-12 Dec. 2007
Firstpage
864
Lastpage
868
Abstract
Bottom die crack issue is found in one type of thin-die and 4-stacked multi-chip-package (MCP) at a failure rate of almost 100 % after full decapsulation by nitric acid. Experiments and FEA simulation of the acid soak process are conducted to find the root cause of the failure. The residual stress redistribution after molding compound has been etched during acid soak is studied using advanced FEA element birth/death technology. If redistributed stress exceeds the strength of silicon, die crack will occur. Stress on the bottom die redistributed during acid soak is dominated by the package itself. The main influencing factors are bottom die thickness and the substrate. Using new destructive analysis method, no die crack found anymore.
Keywords
cracks; failure analysis; finite element analysis; integrated circuit packaging; internal stresses; moulding; multichip modules; nitrogen compounds; acid soak process; bottom die crack; finite element analysis; multichip-package; nitric acid decapsulation; residual stress redistribution; Assembly; Electronics packaging; Etching; Failure analysis; Internal stresses; Residual stresses; Silicon; Sun; Temperature distribution; Thermomechanical processes;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Packaging Technology Conference, 2007. EPTC 2007. 9th
Conference_Location
Singapore
Print_ISBN
978-1-4244-1323-2
Electronic_ISBN
978-1-4244-1323-2
Type
conf
DOI
10.1109/EPTC.2007.4469685
Filename
4469685
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