Title :
Film thickness dependence of the micro-wall solar cell with electric-field effect
Author :
Ohki, Kohei ; Kusakabe, Takashi ; Matsuo, Naoto ; Heya, Akira
Author_Institution :
Univ. of Hyogo, Himeji, Japan
Abstract :
We presented the novel structure of the solar cell that has the metal-oxide-semiconductor (MOS) diode at the side wall of the power generation layer (1). The purpose of this research is to simulate influence of the field-effect on the recombination of carriers for the micro-wall solar cell. It was found that the increase ratio of conversion efficiency under the gate voltage application is 4.5 times at the maximum in comparison with non-gate application corresponding to the conventional solar cell.
Keywords :
MIS devices; electric fields; semiconductor diodes; solar cells; MOS diode; carrier recombination; electric field effect; metal oxide semiconductor diode; microwall solar cell; power generation layer; Energy loss; Logic gates; Photovoltaic cells; Power generation; Radiative recombination; Semiconductor diodes; Electric-Effect Field; Micro-Wall; recombination; solar cell;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-8614-9
DOI :
10.1109/IMFEDK.2015.7158549
