Title :
Cost-effective bifacial silicon solar cells with 19% front and 18% rear efficiency
Author :
Hübner, Andreas ; Aberle, Armin G. ; Hezel, Rudolf
Author_Institution :
Inst. fur Solarenergieforschung Hameln/Emmerthal, Germany
Abstract :
Commercially available silicon solar cells still suffer from relatively low efficiencies and high fabrication costs. One possibility for cost reduction of photovoltaic energy are bifacial cells. This paper presents a new cost-effective bifacial solar cell which combines the excellent surface passivation properties of remote-PECVD silicon nitride films with a simple alloyed local Al back surface field (BSF). The low deposition temperature of the remote-PECVD silicon nitride films (375°C) allows to form the metal contacts prior to the silicon nitride deposition, eliminating photolithographic methods from the fabrication process. On FZ-Si wafers, the new bifacial cells demonstrate independently confirmed 1-Sun efficiencies of 18.4%/18.1% (front/rear) for a rear-optimized design and 19.4%/16.5% for a front-optimized version. Installed in front of a white wall (30% reflected light), the latter cell would produce a power output above 24 mW/cm2
Keywords :
elemental semiconductors; passivation; plasma CVD; plasma CVD coatings; semiconductor device testing; semiconductor thin films; silicon; solar cells; 16.5 percent; 18.1 percent; 18.4 percent; 19.4 percent; 375 C; PECVD thin film semiconductors; Si; back surface field; bifacial Si solar cells; deposition temperature; fabrication; front efficiency; rear efficiency; surface passivation properties; Aluminum alloys; Costs; Fabrication; Passivation; Photovoltaic cells; Photovoltaic systems; Semiconductor films; Silicon alloys; Solar power generation; Temperature;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.564050