Title :
Linearity Measurements of Si/SiGe:C Heterojunction Bipolar Transistor using a Large Signal Network Analyzer associated with an active Load-Pull Setup
Author :
Blanchet, Floria ; El Yaagoubi, M. ; Barataud, Denis ; Nebus, Jean-Michel ; Pache, Denis ; Giry, Alexandre
Author_Institution :
STMicroelectron., Crolles
Abstract :
This paper presents original multi-harmonic modulated load-pull measurements on a Si/SiGe:C HBT of STMicroelectronics technology. The original aspect is that the linearity, power and efficiency measurements are realized on an active load-pull test-bench associated with a large signal network analyzer. The aim of the measurements is to optimize and characterize the HBT excited by a CW and a two-tone signal. The comparison with the simulation lets to validate the models in large-signal
Keywords :
Ge-Si alloys; carbon; elemental semiconductors; heterojunction bipolar transistors; network analysers; power transistors; silicon; Si-SiGe:C; active load pull setup; heterojunction bipolar transistor; intermodulation; large signal network analyzer; linearity measurements; multi harmonic load-pull; power transistors; time domain characterization; two tone measurements; Frequency; Heterojunction bipolar transistors; Linearity; Mobile handsets; Power generation; Power measurement; Power transistors; Signal analysis; Testing; Time domain analysis; Active load-pull technique; intermodulation; large signal network analyzer; multi-harmonic load-pull; power transistors; time-domain characterization; two-tone measurements;
Conference_Titel :
Microwave Conference, 2006. 36th European
Conference_Location :
Manchester
Print_ISBN :
2-9600551-6-0
DOI :
10.1109/EUMC.2006.281287
