• DocumentCode
    3160376
  • Title

    Defect cluster segmentation for CMOS fabricated wafers

  • Author

    Tee, W.J. ; Ooi, M.P.-L. ; Kuang, Y.C. ; Chan, C.

  • Author_Institution
    Monash Univ., Bandar Sunway, Malaysia
  • fYear
    2009
  • fDate
    25-26 July 2009
  • Firstpage
    134
  • Lastpage
    138
  • Abstract
    IC defects, which are essentially present in all fabricated wafers, can either be random defects or belonging to a group of systematic defects. The ability to segment systematic defects that are present in a wafer allows rapid root cause identification and corrective measures to be taken. In this paper, we have developed an algorithm based on the connected-components labeling to perform defect cluster segmentation. Dilation and erosion procedure is performed prior to the labeling process to eliminate isolated random defects in the wafer. A thresholding method which involves manual analysis by an industrial specialist is discussed. The advantage of this method is the ease and speed of implementation, and its robustness in allowing fine-tuning that suits the intended application.
  • Keywords
    CMOS integrated circuits; CMOS fabricated wafer; IC defect; defect cluster segmentation; dilation procedure; erosion procedure; labeling process; systematic defect; thresholding method; Assembly; Circuit testing; Clustering algorithms; Dies; Integrated circuit testing; Labeling; Manufacturing processes; Material storage; Performance evaluation; Probes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Innovative Technologies in Intelligent Systems and Industrial Applications, 2009. CITISIA 2009
  • Conference_Location
    Monash
  • Print_ISBN
    978-1-4244-2886-1
  • Electronic_ISBN
    978-1-4244-2887-8
  • Type

    conf

  • DOI
    10.1109/CITISIA.2009.5224225
  • Filename
    5224225