DocumentCode
3160376
Title
Defect cluster segmentation for CMOS fabricated wafers
Author
Tee, W.J. ; Ooi, M.P.-L. ; Kuang, Y.C. ; Chan, C.
Author_Institution
Monash Univ., Bandar Sunway, Malaysia
fYear
2009
fDate
25-26 July 2009
Firstpage
134
Lastpage
138
Abstract
IC defects, which are essentially present in all fabricated wafers, can either be random defects or belonging to a group of systematic defects. The ability to segment systematic defects that are present in a wafer allows rapid root cause identification and corrective measures to be taken. In this paper, we have developed an algorithm based on the connected-components labeling to perform defect cluster segmentation. Dilation and erosion procedure is performed prior to the labeling process to eliminate isolated random defects in the wafer. A thresholding method which involves manual analysis by an industrial specialist is discussed. The advantage of this method is the ease and speed of implementation, and its robustness in allowing fine-tuning that suits the intended application.
Keywords
CMOS integrated circuits; CMOS fabricated wafer; IC defect; defect cluster segmentation; dilation procedure; erosion procedure; labeling process; systematic defect; thresholding method; Assembly; Circuit testing; Clustering algorithms; Dies; Integrated circuit testing; Labeling; Manufacturing processes; Material storage; Performance evaluation; Probes;
fLanguage
English
Publisher
ieee
Conference_Titel
Innovative Technologies in Intelligent Systems and Industrial Applications, 2009. CITISIA 2009
Conference_Location
Monash
Print_ISBN
978-1-4244-2886-1
Electronic_ISBN
978-1-4244-2887-8
Type
conf
DOI
10.1109/CITISIA.2009.5224225
Filename
5224225
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