Title : 
Defect cluster segmentation for CMOS fabricated wafers
         
        
            Author : 
Tee, W.J. ; Ooi, M.P.-L. ; Kuang, Y.C. ; Chan, C.
         
        
            Author_Institution : 
Monash Univ., Bandar Sunway, Malaysia
         
        
        
        
        
        
            Abstract : 
IC defects, which are essentially present in all fabricated wafers, can either be random defects or belonging to a group of systematic defects. The ability to segment systematic defects that are present in a wafer allows rapid root cause identification and corrective measures to be taken. In this paper, we have developed an algorithm based on the connected-components labeling to perform defect cluster segmentation. Dilation and erosion procedure is performed prior to the labeling process to eliminate isolated random defects in the wafer. A thresholding method which involves manual analysis by an industrial specialist is discussed. The advantage of this method is the ease and speed of implementation, and its robustness in allowing fine-tuning that suits the intended application.
         
        
            Keywords : 
CMOS integrated circuits; CMOS fabricated wafer; IC defect; defect cluster segmentation; dilation procedure; erosion procedure; labeling process; systematic defect; thresholding method; Assembly; Circuit testing; Clustering algorithms; Dies; Integrated circuit testing; Labeling; Manufacturing processes; Material storage; Performance evaluation; Probes;
         
        
        
        
            Conference_Titel : 
Innovative Technologies in Intelligent Systems and Industrial Applications, 2009. CITISIA 2009
         
        
            Conference_Location : 
Monash
         
        
            Print_ISBN : 
978-1-4244-2886-1
         
        
            Electronic_ISBN : 
978-1-4244-2887-8
         
        
        
            DOI : 
10.1109/CITISIA.2009.5224225