DocumentCode
3160438
Title
A 2-V operation RF front-end GaAs MMIC for PHS hand-set
Author
Seshita, T. ; Kawakyu, K. ; Wakimoto, W. ; Nagaoka, M. ; Kitaura, Y. ; Uchitomi, N.
Author_Institution
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
Volume
1
fYear
1998
fDate
7-12 June 1998
Firstpage
167
Abstract
A single 2-V operation RF front-end MMIC has been developed using three kinds of self-aligned gate MESFETs. Its transmitter block of a power amplifier with an antenna switch exhibited a power gain of 28.9 dB and a high power-added efficiency of 27.0% at 20.5-dBm output power. The receiver block of a low-noise amplifier with the antenna switch exhibits a noise figure of 3.4 dB and a gain of 11.1 dB.
Keywords
III-V semiconductors; MESFET integrated circuits; UHF integrated circuits; cellular radio; digital radio; field effect MMIC; gallium arsenide; telephone sets; transceivers; 1.9 GHz; 11.1 dB; 2 V; 27 percent; 28.9 dB; 3.4 dB; GaAs; GaAs MMIC; LNA; PHS hand-set; RF front-end MMIC; antenna switch; low-noise amplifier; power amplifier; receiver block; self-aligned gate MESFETs; transmitter block; Gain; Gallium arsenide; High power amplifiers; MESFETs; MMICs; Radio frequency; Radiofrequency amplifiers; Switches; Transmitters; Transmitting antennas;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location
Baltimore, MD, USA
ISSN
0149-645X
Print_ISBN
0-7803-4471-5
Type
conf
DOI
10.1109/MWSYM.1998.689348
Filename
689348
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