Title :
Sub-quarter micron silicon integrated circuits and single wafer processing
Author_Institution :
Dept. of Electr. Eng., Clemson Univ., SC, USA
Abstract :
This paper reviews the role of single wafer processing in the development of sub-quarter micron silicon integrated circuits (ICs). The issues related to device processing, choice of materials, performance, reliability, and manufacturing are covered. Single wafer processing based rapid photothermal processing (dominant photons with wavelength less than about 800 nm) is an ideal answer to almost all the thermal processing requirements of current and future Si ICs
Keywords :
elemental semiconductors; integrated circuit technology; monolithic integrated circuits; rapid thermal processing; silicon; 0.25 micron; 800 nm; Si; device performance; manufacturing; rapid photothermal processing; reliability; single wafer processing; sub-quarter micron silicon integrated circuit; Dielectric materials; Gallium arsenide; High K dielectric materials; MOSFETs; Manufacturing processes; Materials reliability; Photonic integrated circuits; Silicon; Thermal conductivity; Threshold voltage;
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-3664-X
DOI :
10.1109/ICMEL.1997.625170
