Title :
Heat flow and D* of multilayer thin film pyroelectric detector
Author :
Kang, Q. ; Liu, W.G. ; Zhang, L.Y. ; Yao, X.
Author_Institution :
Electron. Mater. Res. Lab., Xi´´an Jiaotong Univ., China
Abstract :
The pyroelectric responses of multilayer, thin film pyroelectric detector under both isolated and heat sink boundary conditions are completely analyzed. The multilayer detector is composed of pyroelectric layer/thermal isolation layer/silicon substrate. The analytical result shows that when the thickness of the isolation layer is increased, the detectivity, D* at tow frequencies will be improved, and as the thickness of pyroelectric layer is decreased, the high frequency response becomes better. D* of a detector with 1 μm PLZT/10 μm porous silica/0.5 mm silicon is higher than that of the detector with 10 μm PLZT/1 μm porous silica/0.5 mm silicon in a wide frequency range. In order to get a better performance of a multilayer thin film detector, the thicknesses of the two layers should be chosen very carefully. This analysis provides a guide for the preparation of the multilayer thin film pyroelectric detectors
Keywords :
dielectric thin films; ferroelectric materials; ferroelectric thin films; heat transfer; lanthanum compounds; lead compounds; piezoceramics; pyroelectric detectors; silicon; silicon compounds; 0.5 mum; 1 mum; 10 mum; PLZT-SiO2-Si; PLZT/SiO2/Si; PbLaZrO3TiO3-SiO2-Si; detector D*; heat flow; heat sink boundary conditions; high frequency response; isolated boundary conditions; multilayer detector; multilayer thin film pyroelectric detector; pyroelectric layer/thermal isolation layer/Si substrate; pyroelectric responses; Boundary conditions; Detectors; Heat sinks; Nonhomogeneous media; Pyroelectricity; Silicon; Substrates; Temperature; Thermal conductivity; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on
Conference_Location :
University Park, PA
Print_ISBN :
0-7803-1847-1
DOI :
10.1109/ISAF.1994.522423
